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| SSM6J07FU TOSHIBA Transistor Silicon P Channel MOS Type SSM6J07FU Power Management Switch High Speed Switching Applications * * Small package Low on resistance : Ron = 450 m (max) (VGS = -10 V) : Ron = 800 m (max) (VGS = -4 V) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note1) Tch Tstg Rating -30 20 -0.8 -1.6 300 150 -55~150 Unit V V A mW C C JEDEC JEITA TOSHIBA 2-2J1D Note 1: Mounted on FR4 board 2 (25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm 6) Weight: 6.8 mg (typ.) Marking Equivalent Circuit Figure 1: (top view) 25.4 mm 25.4 mm 1.6 t, Cu Pad: 0.32 mm2 6 0.4 mm 6 5 4 6 5 4 0.8 mm KDF 1 2 3 1 2 3 1 2002-01-24 SSM6J07FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth 1/2Yfs1/2 Test Condition VGS = 16 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -30 V, VGS = 0 VDS = -5 V, ID = -0.1 mA VDS = -5 V, ID = -0.4 A ID = -0.4 A, VGS = -10 V Drain-source ON resistance RDS (ON) ID = -0.4 A, VGS = -4 V ID = -0.4 A, VGS = -3.3 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note2) (Note2) (Note2) (Note2) Min 3/4 -30 3/4 -1.1 0.7 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 350 570 0.7 130 16 52 28 38 Max 1 3/4 -1 -1.8 3/4 450 800 1.6 3/4 3/4 3/4 3/4 3/4 Unit mA V mA V S mW W pF pF pF ns ns VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDS = -15 V, VGS = 0, f = 1 MHz VDD = -15 V, ID = -0.4 A, VGS = 0~-4 V, RG = 10 W Note 2: Pulse test Switching Time Test Circuit (a) Test circuit ID Input RG -4 V VDD Output (b) VIN 0V 0 -4 V 10 ms 10% 90% (c) VOUT VDS (ON) VDD = -15 V RG = 10 W D.U. < 1% = Input: tr, tf < 5 ns Common source Ta = 25C 90% 10% tr ton tf toff VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = -100 mA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. VGS recommended voltage of -4.0 V or higher to turn on this product. 2 2002-01-24 SSM6J07FU ID - VDS -2 Common Source -10 -4 Ta = 25C -3000 -1000 Common Source VDS = -5 V ID - VGS Ta = 100C 25C -25C (mA) ID Drain current -2 (A) -1.5 -3.3 -100 ID Drain current -1 -3.0 -2.8 -0.5 -2.6 -10 -1 -0.1 0 0 VGS = -2.4 V -0.5 -1 -1.5 -0.01 0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) - ID 1600 Common Source 1400 Ta = 25C 1400 ID = -0.4 A 1600 Common Source RDS (ON) - Ta Drain-Source on resistance RDS (ON) (mW) 1200 1000 800 600 400 200 0 0 -10 V VGS = -3.3 V -4 V Drain-Source on resistance RDS (ON) (mW) 1200 1000 VGS = -3.3 V 800 600 400 200 0 -25 -4 V -10 V -0.5 -1 -1.5 -2 0 25 50 75 100 125 150 Drain current ID (A) Ambient temperature Ta (C) |Yfs| - ID 10 Common Source -2 Common Source VGS = 0 -1.5 Ta = 25C IDR - VDS VDS = -5 V 3 Ta = 25C |Yfs| (S) Forward transfer admittance Drain reverse current IDR 1 (A) D IDR S G -1 0.3 0.1 -0.5 0.03 0.01 -0.01 -0.03 -0.1 -0.3 -1 -3 -10 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Drain current ID (A) Drain-Source voltage VDS (V) 3 2002-01-24 SSM6J07FU C - VDS 1000 500 500 300 toff 100 50 Ciss t - ID Common Source VDD = -15 V VGS = 0~-4 V Rg = 10 W Ta = 25C 100 tf (pF) Capacitance C Switching time Coss Common Source t 50 30 ton 10 tr 5 -0.01 -0.03 -0.1 -0.3 -1 10 VGS = 0 V f = 1 MHz 5 -0.1 Ta = 25C -0.5 -1 -5 -10 -50 -100 Crss Drain-Source voltage VDS (V) (ns) Drain current ID (A) Safe Operating Area -10 350 PD - Ta Mounted on FR4 board 300 (25.4 mm 25.4 mm 1.6 t, 2 Cu pad: 0.32 mm 6) Figure 1 ID max (pulse) * -1 10 ms ID max (continuous) 1 ms (mW) PD Power dissipation 250 200 150 100 50 0 0 (A) 100 ms ID Drain current -0.1 DC operation Ta = 25C Mounted on FR4 board (25.4 mm 25.4 mm 1.6 t 2 Cu pad: 0.32 mm 6) Figure 1 20 40 60 80 100 120 140 160 -0.01 * Single non-repetitive pulse Ta = 25C Curves must be derated linearly with increase in VDSS max -10 -100 Ambient temperature Ta (C) temperature. -0.001 -0.1 -1 Drain-Source voltage VDS (V) 4 2002-01-24 SSM6J07FU RESTRICTIONS ON PRODUCT USE 000707EAA *TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. *The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. *The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. *The information contained herein is subject to change without notice. 5 2002-01-24 |
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